Interfacial Layer Engineering for Ge MOSFET by Metal Element Doping and Characterization of Interface Density

標題:	Interfacial Layer Engineering for Ge MOSFET by Metal Element Doping and Characterization of Interface Density
作者:	Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-Jan-2018
URI:	http://hdl.handle.net/11536/151068
期刊:	2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
起始頁:	101
結束頁:	101
Appears in Collections:	Conferences Paper