標題: Electrical Properties of Compound 2D Semiconductor Mo1-xNbxS2
作者: Lu, Peng
Ho, Yen Teng
Chu, Yung-Ching
Zhang, Ming
Chien, Po-Yen
Luong, Tien-Tung
Chang, Edward Yi
Woo, Jason C. S.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 1-Jan-2018
摘要: In order for TMD such as molybdenum disulfide (MoS2) to be useful for semiconductor industry, a controllable doping process is required. MoS2 with substitutional Nb shows a p-type behavior compared to the n-type characteristics of nominal films. In this work, the role of Nb in MoS2 will be examined, and a precise hole concentration control technique is demonstrated. Multi-layered Mo1-xNbxS2 samples with accurately controlled Nb mole fraction are synthesized. Electrical characterization and material analysis are performed to quantify the impact of Nb with mole fraction from 3.5% to 11%. The effective carrier concentration (p) and the ective hole mobility (mu(eff)) are found to be highly non-linear with respect to Nb mole fraction. Scanning Tunneling Microscope (STM) shows that the bandgap of the 2D transition metal dichalcogenide (TMD) is reduced by high mole fraction Nb. Therefore, Mo1-xNbxS2 can be considered as a compound TMD semiconductor.
URI: http://hdl.handle.net/11536/151075
期刊: 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT)
起始頁: 702
結束頁: 705
Appears in Collections:Conferences Paper