CHARACTERIZATION AND SIMULATION OF HOT CARRIER EFFECT ON ERASING GATE CURRENT IN FLASH EEPROMS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	HUANG, CM	en_US
dc.contributor.author	WANG, TH	en_US
dc.contributor.author	CHEN, T	en_US
dc.contributor.author	PENG, NC	en_US
dc.contributor.author	CHANG, A	en_US
dc.contributor.author	SHONE, FC	en_US
dc.date.accessioned	2019-04-02T06:04:36Z	-
dc.date.available	2019-04-02T06:04:36Z	-
dc.date.issued	1995-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/151140	-
dc.language.iso	en_US	en_US
dc.title	CHARACTERIZATION AND SIMULATION OF HOT CARRIER EFFECT ON ERASING GATE CURRENT IN FLASH EEPROMS	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	1995 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 33RD ANNUAL	en_US
dc.citation.spage	61	en_US
dc.citation.epage	64	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.identifier.wosnumber	WOS:A1995BD05F00011	en_US
dc.citation.woscount	1	en_US
顯示於類別：	會議論文