The impact of microstructure end defects on moisture resistance of novel SiOxNy passivation layer for OLED applications

Abstract

The effects of grain boundaries in passivation layer and AI hillocks on moisture resistance were studied for SiOxNy thin films deposited by modified Ar ion beam evaporation. AI hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications.