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dc.contributor.authorChen, Yi-Jenen_US
dc.contributor.authorHsu, Kuo-Yuanen_US
dc.contributor.authorChen, Yin-Yingen_US
dc.contributor.authorSu, Cheng-Fengen_US
dc.contributor.authorTang, Shuenn-Jiunen_US
dc.contributor.authorLeu, Jihperngen_US
dc.date.accessioned2019-04-02T06:04:43Z-
dc.date.available2019-04-02T06:04:43Z-
dc.date.issued2007-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/151157-
dc.description.abstractThe effects of grain boundaries in passivation layer and AI hillocks on moisture resistance were studied for SiOxNy thin films deposited by modified Ar ion beam evaporation. AI hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications.en_US
dc.language.isoen_USen_US
dc.titleThe impact of microstructure end defects on moisture resistance of novel SiOxNy passivation layer for OLED applicationsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007en_US
dc.citation.spage280en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000258177700071en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper


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