The impact of microstructure end defects on moisture resistance of novel SiOxNy passivation layer for OLED applications

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chen, Yi-Jen	en_US
dc.contributor.author	Hsu, Kuo-Yuan	en_US
dc.contributor.author	Chen, Yin-Ying	en_US
dc.contributor.author	Su, Cheng-Feng	en_US
dc.contributor.author	Tang, Shuenn-Jiun	en_US
dc.contributor.author	Leu, Jihperng	en_US
dc.date.accessioned	2019-04-02T06:04:43Z	-
dc.date.available	2019-04-02T06:04:43Z	-
dc.date.issued	2007-01-01	en_US
dc.identifier.uri	http://hdl.handle.net/11536/151157	-
dc.description.abstract	The effects of grain boundaries in passivation layer and AI hillocks on moisture resistance were studied for SiOxNy thin films deposited by modified Ar ion beam evaporation. AI hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications.	en_US
dc.language.iso	en_US	en_US
dc.title	The impact of microstructure end defects on moisture resistance of novel SiOxNy passivation layer for OLED applications	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007	en_US
dc.citation.spage	280	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000258177700071	en_US
dc.citation.woscount	0	en_US
顯示於類別：	會議論文