The impact of microstructure end defects on moisture resistance of novel SiOxNy passivation layer for OLED applications

Title:	The impact of microstructure end defects on moisture resistance of novel SiOxNy passivation layer for OLED applications
Authors:	Chen, Yi-Jen Hsu, Kuo-Yuan Chen, Yin-Ying Su, Cheng-Feng Tang, Shuenn-Jiun Leu, Jihperng 材料科學與工程學系 Department of Materials Science and Engineering
Issue Date:	1-Jan-2007
Abstract:	The effects of grain boundaries in passivation layer and AI hillocks on moisture resistance were studied for SiOxNy thin films deposited by modified Ar ion beam evaporation. AI hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications.
URI:	http://hdl.handle.net/11536/151157
Journal:	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007
Begin Page:	280
Appears in Collections:	Conferences Paper