标题: Near Infrared Silicon Quantum Dots MOSFET Detector
作者: Shieh, Jia-Min
Yu, Wen-Chien
Wang, Chao-Kei
Dai, Bau-Tong
Kuo, Hao-Chung
Huang, Jung Y.
Pan, C-Ling
光电工程学系
Department of Photonics
公开日期: 1-一月-2009
摘要: Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths lambda=1.55 mu m, photoresponse as high as 2.0A/W was measured. (C) 2009 Optical Society of America
URI: http://hdl.handle.net/11536/151178
期刊: 2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5
起始页: 130
显示于类别:Conferences Paper