FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH

標題:	FINFET SEMICONDUCTOR DEVICE HAVING FINS WITH STRONGER STRUCTURAL STRENGTH
作者:	Chao-Hsin CHIEN Chen-Han CHOU Cheng-Ting CHUNG Samuel C. PAN
公開日期:	4-五月-2017
摘要:	A semiconductor device including at least one fin disposed on a surface of a semiconductor substrate is provided. The fin includes a main portion extending along a first direction, and at least one secondary portion extending outward from the main portion along a second direction not collinear with the first direction.
官方說明文件#:	H01L027/088 H01L029/08 H01L027/02 H01L021/8234 H01L029/78 H01L029/06 H01L029/423
URI:	http://hdl.handle.net/11536/151271
專利國:	USA
專利號碼:	20170125415
顯示於類別：	專利資料

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