完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Steve S. CHUNG | en_US |
dc.contributor.author | E-Ray HSIEH | en_US |
dc.contributor.author | Yi-Hsien LIN | en_US |
dc.date.accessioned | 2019-04-11T05:47:35Z | - |
dc.date.available | 2019-04-11T05:47:35Z | - |
dc.date.issued | 2017-08-03 | en_US |
dc.identifier.govdoc | H01L029/78 | en_US |
dc.identifier.govdoc | H01L029/66 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/151295 | - |
dc.description.abstract | Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure at least partially in a semiconductor substrate. The semiconductor device structure also includes a channel structure over the semiconductor substrate. The source structure is partially covered by the channel structure. The semiconductor device structure further includes a drain structure covering the channel structure. The drain structure and the source structure have different conductivity types. A portion of the channel structure is sandwiched between the source structure and the drain structure. In addition, the semiconductor device structure includes a gate stack partially covering the channel structure. | en_US |
dc.language.iso | en_US | en_US |
dc.title | STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE | en_US |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | en_US |
dc.citation.patentnumber | 20170222044 | en_US |
顯示於類別: | 專利資料 |