Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 莊紹勳 | zh_TW |
| dc.contributor.author | 謝易叡 | zh_TW |
| dc.contributor.author | 趙堉斌 | zh_TW |
| dc.contributor.author | 潘正聖 | zh_TW |
| dc.date.accessioned | 2019-04-11T05:58:14Z | - |
| dc.date.available | 2019-04-11T05:58:14Z | - |
| dc.date.issued | 2017-06-16 | en_US |
| dc.identifier.govdoc | H01L021/336 | en_US |
| dc.identifier.govdoc | H01L029/02 | en_US |
| dc.identifier.govdoc | H01L029/66 | en_US |
| dc.identifier.govdoc | H01L029/78 | en_US |
| dc.identifier.govdoc | H01L029/786 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/151372 | - |
| dc.description.abstract | 本揭露提供半導體裝置結構與其形成方法。半導體裝置結構包括源極結構於半導體基板中。半導體裝置結構亦包括通道層於半導體基板上。通道層的第一部份覆蓋部份源極結構。通道層的第二部份橫向地延伸出源極結構。半導體裝置結構更包括汲極結構於半導體基板上。汲極結構與源極結構具有不同的導電型態。汲極結構鄰接通道層的第二部份。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體裝置結構 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | en_US |
| dc.citation.patentnumber | 201721763 | en_US |
| Appears in Collections: | Patents | |
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