完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Jeng-Tzong SHEU | en_US |
dc.contributor.author | Chih-Wei CHEN | en_US |
dc.date.accessioned | 2019-04-11T06:06:41Z | - |
dc.date.available | 2019-04-11T06:06:41Z | - |
dc.date.issued | 2018-04-19 | en_US |
dc.identifier.govdoc | G01N033/543 | en_US |
dc.identifier.govdoc | H01L029/06 | en_US |
dc.identifier.govdoc | H01L029/739 | en_US |
dc.identifier.govdoc | H01L029/423 | en_US |
dc.identifier.govdoc | H01L029/66 | en_US |
dc.identifier.govdoc | G01N027/414 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/151423 | - |
dc.description.abstract | Provided is a biological sensing system, including a nanowire field-effect transistor and a sensing chip. A gate terminal of the nanowire FET surrounds a gate of a silicon nanowire or a gate of a silicon nanobelt, diameter of the silicon nanowire is less than 20 nm. A sensing electrode of the sensing chip is coupled to the gate terminal of the nanowire FET. An area ratio of an electrode area of the sensing electrode to a total sensing chip area, a thickness ratio of an oxide thickness of sensing electrode to a bulk oxide dielectric film thickness of the sensing chip and a capacitance ratio of an electrode capacitor of the sensing electrode to a gate capacitor of the silicon nanowire or a gate capacitor of the silicon nanobelt are optimized by means of an equivalent circuit so that potential coupling efficiency between sensing electrode and gate is optimized. | en_US |
dc.language.iso | en_US | en_US |
dc.title | BIOLOGICAL SENSING SYSTEM | en_US |
dc.type | Patents | en_US |
dc.citation.patentcountry | USA | en_US |
dc.citation.patentnumber | 20180106796 | en_US |
顯示於類別: | 專利資料 |