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dc.contributor.authorJeng-Tzong SHEUen_US
dc.contributor.authorChih-Wei CHENen_US
dc.date.accessioned2019-04-11T06:06:41Z-
dc.date.available2019-04-11T06:06:41Z-
dc.date.issued2018-04-19en_US
dc.identifier.govdocG01N033/543en_US
dc.identifier.govdocH01L029/06en_US
dc.identifier.govdocH01L029/739en_US
dc.identifier.govdocH01L029/423en_US
dc.identifier.govdocH01L029/66en_US
dc.identifier.govdocG01N027/414en_US
dc.identifier.urihttp://hdl.handle.net/11536/151423-
dc.description.abstractProvided is a biological sensing system, including a nanowire field-effect transistor and a sensing chip. A gate terminal of the nanowire FET surrounds a gate of a silicon nanowire or a gate of a silicon nanobelt, diameter of the silicon nanowire is less than 20 nm. A sensing electrode of the sensing chip is coupled to the gate terminal of the nanowire FET. An area ratio of an electrode area of the sensing electrode to a total sensing chip area, a thickness ratio of an oxide thickness of sensing electrode to a bulk oxide dielectric film thickness of the sensing chip and a capacitance ratio of an electrode capacitor of the sensing electrode to a gate capacitor of the silicon nanowire or a gate capacitor of the silicon nanobelt are optimized by means of an equivalent circuit so that potential coupling efficiency between sensing electrode and gate is optimized.en_US
dc.language.isoen_USen_US
dc.titleBIOLOGICAL SENSING SYSTEMen_US
dc.typePatentsen_US
dc.citation.patentcountryUSAen_US
dc.citation.patentnumber20180106796en_US
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