Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 侯拓宏 | zh_TW |
| dc.contributor.author | 潘正聖 | zh_TW |
| dc.contributor.author | 劉邦軒 | zh_TW |
| dc.date.accessioned | 2019-04-11T06:20:31Z | - |
| dc.date.available | 2019-04-11T06:20:31Z | - |
| dc.date.issued | 2018-07-01 | en_US |
| dc.identifier.govdoc | H01L021/28 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/151476 | - |
| dc.description.abstract | 一種包含場效電晶體裝置的半導體裝置，包含基板與在基板上的二維材料所製成的通道結構。多個源極與汲極接觸部分地形成於二維材料上。第一介電層至少部分地形成在通道結構上且至少部分地形成在源極與汲極接觸上。第一介電層用以捕獲多個電荷載子。第二介電層形成於第一介電層上，且閘極電極形成於第二介電層上。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體裝置的製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | en_US |
| dc.citation.patentnumber | 201824375 | en_US |
| Appears in Collections: | Patents | |
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