標題: Electrical Characteristic of AlGaN/GaN High-Electron-Mobility Transistors With Recess Gate Structure
作者: Shrestha, Niraj Man
Li, Yiming
Suemitsu, Tetsuya
Samukawa, Seiji
交大名義發表
電機工程學系
National Chiao Tung University
Department of Electrical and Computer Engineering
關鍵字: High-electron-mobility transistors (HEMTs);mobility;neutral beam etching (NBE);recess
公開日期: 1-Apr-2019
摘要: AlGaN/GaN high-electron-mobility transistors (HEMTs) with nonrecess and recess gates are simulated by solving a set of drift-diffusion equations for electrostatic potential and electron-hole concentrations with self-heating model. The approach is first calibrated for both HEMT devices with experimentally measured data, to provide the best accuracy of the simulation. Recess gate device suffers from high potential to the channel, increased parasitic resistances, and deep level traps in barrier due to surface roughness. In addition, selective thinning of the barrier and increase parasitic resistance results in 17% reduction on the carrier concentration. The carrier mobility degradation due to surface roughness and electron velocity lessen due to high electric field result shrinkage of current density with considerable shift of the threshold voltage toward positive value. Even though transconductance does not seems to be remarkably changed for 3-nm recess gate, its value increases on deeper recess. This paper reveals that surface roughness is crucial issue that has dominant role behind the low current density in the recess gate structure. The detail physical understanding of the recess technology will be helpful to minimize the performance deterioration of the explored devices.
URI: http://dx.doi.org/10.1109/TED.2019.2901719
http://hdl.handle.net/11536/151574
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2901719
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 4
起始頁: 1694
結束頁: 1698
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