標題: LiSiOX-Based Analog Memristive Synapse for Neuromorphic Computing
作者: Chen, Jia
Lin, Chih-Yang
Li, Yi
Qin, Chao
Lu, Ke
Wang, Jie-Ming
Chen, Chun-Kuei
He, Yu-Hui
Chang, Ting-Chang
Sze, Simon M.
Miao, Xiang-Shui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LiSiOX;memristor;electronic synapse;neural network;pattern recognition
公開日期: 1-四月-2019
摘要: The progress in the neuromorphic computing hinges on the development of nanoscale analog artificial synapses. Here, we report a LiSiOX (LSO)-based memristive synapse with 100-level conductance states under identical pulses, representing synaptic potentiation and depression behaviors. The superior analog behaviors originate from the dynamic evolution of an electro-thermal modulation region with the motion of lithium and oxygen ions. A three-layer perceptron was constructed in simulation with LSO synapses, and a 91.97% recognition accuracy was achieved for handwritten digits. Moreover, the influences of several critical parameters, including device variability and weight precision, on the accuracy have been investigated. This letter provides guidelines for the optimization of synaptic device in robust memristive neural network.
URI: http://dx.doi.org/10.1109/LED.2019.2898443
http://hdl.handle.net/11536/151577
ISSN: 0741-3106
DOI: 10.1109/LED.2019.2898443
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 40
Issue: 4
起始頁: 542
結束頁: 545
顯示於類別:期刊論文