標題: | Enhanced Synaptic Linearity in ZnO-Based Invisible Memristive Synapse by Introducing Double Pulsing Scheme |
作者: | Chandrasekaran, Sridhar Simanjuntak, Firman Mangasa Panda, Debashis Tseng, Tseung-Yuen 電子工程學系及電子研究所 電機工程學系 Department of Electronics Engineering and Institute of Electronics Department of Electrical and Computer Engineering |
關鍵字: | Switches;Synapses;Neurons;Memristors;Linearity;Indium tin oxide;Brain-inspired computing;neural networks;resistive synapse;synapse |
公開日期: | 1-十一月-2019 |
摘要: | The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88 %) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices. |
URI: | http://dx.doi.org/10.1109/TED.2019.2941764 http://hdl.handle.net/11536/153228 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2019.2941764 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 66 |
Issue: | 11 |
起始頁: | 4722 |
結束頁: | 4726 |
顯示於類別: | 期刊論文 |