Full metadata record
DC FieldValueLanguage
dc.contributor.authorChen, Jiaen_US
dc.contributor.authorLin, Chih-Yangen_US
dc.contributor.authorLi, Yien_US
dc.contributor.authorQin, Chaoen_US
dc.contributor.authorLu, Keen_US
dc.contributor.authorWang, Jie-Mingen_US
dc.contributor.authorChen, Chun-Kueien_US
dc.contributor.authorHe, Yu-Huien_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorMiao, Xiang-Shuien_US
dc.date.accessioned2019-05-02T00:25:48Z-
dc.date.available2019-05-02T00:25:48Z-
dc.date.issued2019-04-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2019.2898443en_US
dc.identifier.urihttp://hdl.handle.net/11536/151577-
dc.description.abstractThe progress in the neuromorphic computing hinges on the development of nanoscale analog artificial synapses. Here, we report a LiSiOX (LSO)-based memristive synapse with 100-level conductance states under identical pulses, representing synaptic potentiation and depression behaviors. The superior analog behaviors originate from the dynamic evolution of an electro-thermal modulation region with the motion of lithium and oxygen ions. A three-layer perceptron was constructed in simulation with LSO synapses, and a 91.97% recognition accuracy was achieved for handwritten digits. Moreover, the influences of several critical parameters, including device variability and weight precision, on the accuracy have been investigated. This letter provides guidelines for the optimization of synaptic device in robust memristive neural network.en_US
dc.language.isoen_USen_US
dc.subjectLiSiOXen_US
dc.subjectmemristoren_US
dc.subjectelectronic synapseen_US
dc.subjectneural networken_US
dc.subjectpattern recognitionen_US
dc.titleLiSiOX-Based Analog Memristive Synapse for Neuromorphic Computingen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2019.2898443en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume40en_US
dc.citation.issue4en_US
dc.citation.spage542en_US
dc.citation.epage545en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000464306900014en_US
dc.citation.woscount0en_US
Appears in Collections:Articles