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dc.contributor.authorDai, Jiangnanen_US
dc.contributor.authorChen, Jingwenen_US
dc.contributor.authorLi, Xiaohangen_US
dc.contributor.authorZhang, Junen_US
dc.contributor.authorLong, Hanlingen_US
dc.contributor.authorKuo, Haochungen_US
dc.contributor.authorHe, Yunbinen_US
dc.contributor.authorChen, Changqingen_US
dc.date.accessioned2019-05-02T00:25:51Z-
dc.date.available2019-05-02T00:25:51Z-
dc.date.issued2019-04-15en_US
dc.identifier.issn0146-9592en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OL.44.001944en_US
dc.identifier.urihttp://hdl.handle.net/11536/151598-
dc.description.abstractWe report on the demonstration of a 386 nm light emission and detection dual-functioning device based on nonpolar a-plane n-ZnO/i-ZnO/p-Al0.1Ga0.9N heterojunction under both forward and reverse bias. The electroluminescence intensity under reverse bias is significantly stronger than that under forward bias, facilitated by carrier tunneling when the valence band of p-AlGaN aligns with the conduction band of i-ZnO under reverse bias. Also amid reverse bias, the photodetection was observed and applied in a duplex optical communication device. Optical polarization of the light emission is studied for potential polarization-sensitive device applications. The proposed device provides an important pathway for the multifunctional devices operating in a UV spectrum. (C) 2019 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleUltraviolet polarized light emitting and detecting dual-functioning device based on nonpolar n-ZnO/i-ZnO/p-AlGaN heterojunctionen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OL.44.001944en_US
dc.identifier.journalOPTICS LETTERSen_US
dc.citation.volume44en_US
dc.citation.issue8en_US
dc.citation.spage1944en_US
dc.citation.epage1947en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000464601900016en_US
dc.citation.woscount0en_US
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