標題: All Nonmetal Resistive Random Access Memory
作者: Yen, Te Jui
Gismatulin, Andrei
Volodin, Vladimir
Gritsenko, Vladimir
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 16-Apr-2019
摘要: Traditional Resistive Random Access Memory (RRAM) is a metal-insulator-metal (MIM) structure, in which metal oxide is usually used as an insulator. The charge transport mechanism of traditional RRAM is attributed to a metallic filament inside the RRAM. In this paper, we demonstrated a novel RRAM device with no metal inside. The N+-Si/SiOx/P+-Si combination forms a N+IP+ diode structure that is different from traditional MIM RRAM. A large high-resistance/low-resistance window of 1.9 x 10(4) was measured at room temperature. A favorable retention memory window of 1.2 x 10(3) was attained for 10(4)s at 85 degrees C. The charge transport mechanism of virgin, high- and low-resistance states can be well modeled by the single Shklovskii-Efros percolation mechanism rather than the charge transport in metallic filament. X-ray photoelectron spectroscopy demonstrated that the value of x in SiOx was 0.62, which provided sufficient oxygen vacancies for set/reset RRAM functions.
URI: http://dx.doi.org/10.1038/s41598-019-42706-9
http://hdl.handle.net/11536/151601
ISSN: 2045-2322
DOI: 10.1038/s41598-019-42706-9
期刊: SCIENTIFIC REPORTS
Volume: 9
起始頁: 0
結束頁: 0
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