| 標題: | 氮化矽薄膜應用於銅導電橋隨機存取記憶體之特性研究 A Study on Copper Conductive-Bridging Random Access Memory Made by SiNx Thin Film |
| 作者: | 藍順醴 Lan, Shun-Li 曾俊元 Tseng, Tseung-Yuen 電子工程學系 電子研究所 |
| 關鍵字: | 氮化矽;銅導電橋隨機存取記憶體;電阻式隨機存取記憶體;SiNx;Copper Conductive-Bridging Random Access Memory;Resistive Random Access Memory |
| 公開日期: | 2015 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070250145 http://hdl.handle.net/11536/126616 |
| 顯示於類別： | 畢業論文 |
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