標題: Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory
作者: Lin, Chun-An
Dai, Guang-Jyun
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Binding energy;bipolar resistive switching (BRS);conductive bridge random access memory (CBRAM);filament diffusion;retention
公開日期: 1-九月-2018
摘要: The switching properties of Te and TeTiW top electrodes (TEs) on TiW/SitsifTiN resistive switching memory devices are explored in this paper. The TeTiW TE device exhibits more favorable bipolar resistive switching behavior because of the decrease in binding energy after its use. This finding is confirmed through X-ray photoelectron spectroscopy analyses. The filament of the TeTiW TE device is metal like after forming, and the reset process corresponds with the thermal-dissolution mechanism. A physical model based on a Te filament is constructed to explain such phenomena. The TeTiW TE device provides the excellent endurance of more than 10(4) cycles, with an ON/OFF ratio of 500. The improvement can be attributed to the filament's robustness during the forming and set processes, which prevent its diffusion even at high temperature. The device also features long retention for up to 10(4) sat 225 degrees C without stress, and 10(4) s at 85 degrees C with stress of -0.3 V. Therefore, it has high potential for high-density nonvolatile memory applications.
URI: http://dx.doi.org/10.1109/TED.2018.2859227
http://hdl.handle.net/11536/148040
ISSN: 0018-9383
DOI: 10.1109/TED.2018.2859227
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 65
起始頁: 3775
結束頁: 3779
顯示於類別:期刊論文