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DC FieldValueLanguage
dc.contributor.author藍順醴en_US
dc.contributor.authorLan, Shun-Lien_US
dc.contributor.author曾俊元en_US
dc.contributor.authorTseng, Tseung-Yuenen_US
dc.date.accessioned2015-11-26T00:56:41Z-
dc.date.available2015-11-26T00:56:41Z-
dc.date.issued2015en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT070250145en_US
dc.identifier.urihttp://hdl.handle.net/11536/126616-
dc.language.isoen_USen_US
dc.subject氮化矽zh_TW
dc.subject銅導電橋隨機存取記憶體zh_TW
dc.subject電阻式隨機存取記憶體zh_TW
dc.subjectSiNxen_US
dc.subjectCopper Conductive-Bridging Random Access Memoryen_US
dc.subjectResistive Random Access Memoryen_US
dc.title氮化矽薄膜應用於銅導電橋隨機存取記憶體之特性研究zh_TW
dc.titleA Study on Copper Conductive-Bridging Random Access Memory Made by SiNx Thin Filmen_US
dc.typeThesisen_US
dc.contributor.department電子工程學系 電子研究所zh_TW
Appears in Collections:Thesis


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