| 標題: | 氮化矽薄膜應用於銅導電橋隨機存取記憶體之特性研究 A Study on Copper Conductive-Bridging Random Access Memory Made by SiNx Thin Film |
| 作者: | 藍順醴 Lan, Shun-Li 曾俊元 Tseng, Tseung-Yuen 電子工程學系 電子研究所 |
| 關鍵字: | 氮化矽;銅導電橋隨機存取記憶體;電阻式隨機存取記憶體;SiNx;Copper Conductive-Bridging Random Access Memory;Resistive Random Access Memory |
| 公開日期: | 2015 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070250145 http://hdl.handle.net/11536/126616 |
| Appears in Collections: | Thesis |
- 氧化鋯金屬橋接電阻式記憶體轉態特性優化之研究 / 江法伸;Jiang, Fa-Shen;曾俊元;Tseng, Tseung-Yuen
- Resistive Switching Characteristics and Reliability of SiNx-Based Conductive Bridge Random Access Memory / Lin, Chun-An;Dai, Guang-Jyun;Tseng, Tseung-Yuen
- Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory / Singh, Pragya;Simanjuntak, Firman Mangasa;Kumar, Amit;Tseng, Tseung-Yuen
- 鎵摻雜氧化鋅奈米柱金屬橋接電阻式記憶體轉態特性之研究 / 辛沛柔;Singh,Pragya;曾俊元;Tseng, Seung-Yuen
- Role of Al2O3 thin layer on improving the resistive switching properties of Ta5Si3-based conductive bridge random accesses memory device / Kumar, Dayanand;Aluguri, Rakesh;Chand, Umesh;Tseng, Tseung-Yuen
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