Title: Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions
Authors: Chen, Yu-Chen
Hsieh, Pin-Hsien
Lin, Gray
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Keywords: quantum dots;mode-locked lasers;semiconductor lasers;molecular beam epitaxy;dual-wavelength lasers
Issue Date: 1-Jan-2019
Abstract: Monolithic passively mode-locked lasers are investigated based on chirped multi-layer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light-current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions. (C) 2019 Society of Photo-Optical Instrumentation Engineers (SPIE)
URI: http://dx.doi.org/10.1117/1.JNP.13.016001
http://hdl.handle.net/11536/151690
ISSN: 1934-2608
DOI: 10.1117/1.JNP.13.016001
Journal: JOURNAL OF NANOPHOTONICS
Volume: 13
Issue: 1
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End Page: 0
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