標題: | Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory |
作者: | Chiu, J. P. Chou, Y. L. Ma, H. C. Wang, Tahui Ku, S. H. Zou, N. K. Chen, Vincent Lu, W. P. Chen, K. C. Lu, Chih-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2009 |
摘要: | Nitride program charge effects on random telegraph noise (RTN) in SONOS flash cells are investigated. We measure and simulate RTN amplitudes in floating gate flash, planar SONOS, and FinFET SONOS cells. We find that a planar SONOS has a wide spread in RTN amplitude after programming while a floating gate flash cell has identical RTN amplitude in erase and program states. The spread of program-state RTN amplitudes in a planar SONOS is attributed to a current-path percolation effect caused by random discrete nitride charges. The program-state RTN spread can be significantly reduced in FinFET SONOS. |
URI: | http://hdl.handle.net/11536/15181 |
ISBN: | 978-1-4244-5639-0 |
期刊: | 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING |
起始頁: | 789 |
結束頁: | 792 |
顯示於類別: | 會議論文 |