標題: Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash Memory
作者: Chiu, J. P.
Chou, Y. L.
Ma, H. C.
Wang, Tahui
Ku, S. H.
Zou, N. K.
Chen, Vincent
Lu, W. P.
Chen, K. C.
Lu, Chih-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2009
摘要: Nitride program charge effects on random telegraph noise (RTN) in SONOS flash cells are investigated. We measure and simulate RTN amplitudes in floating gate flash, planar SONOS, and FinFET SONOS cells. We find that a planar SONOS has a wide spread in RTN amplitude after programming while a floating gate flash cell has identical RTN amplitude in erase and program states. The spread of program-state RTN amplitudes in a planar SONOS is attributed to a current-path percolation effect caused by random discrete nitride charges. The program-state RTN spread can be significantly reduced in FinFET SONOS.
URI: http://hdl.handle.net/11536/15181
ISBN: 978-1-4244-5639-0
期刊: 2009 IEEE INTERNATIONAL ELECTRON DEVICES MEETING
起始頁: 789
結束頁: 792
顯示於類別:會議論文