NO gas sensor based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

Abstract

A gas sensor based on a ZnGa2O4(ZGO) thin film grown by metalorganic chemical vapor deposition operated under the different temperature from 25 degrees C to 300 degrees C is investigated in this study. This sensor shows great sensing properties at 300 degrees C. The sensitivity of this sensor is 22.21 as exposed to 6.25 ppm of NO and its response time is 57 s. Besides that, the sensitivities are 1.18, 1.27, 1.06, and 1.00 when exposed to NO2(500 ppb), SO2 (125 ppm), CO (125 ppm), and CO2 (1500 ppm), respectively. These results imply that the ZGO gas sensor not only has high sensitivity, but also has great selectivity for NO gas. Moreover, the obtained results suggest that ZGO sensors are suitable for the internet of things(IOT) applications.