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dc.contributor.authorKang, Chieh-Yuen_US
dc.contributor.authorLin, Chih-Haoen_US
dc.contributor.authorWu, Tingzhuen_US
dc.contributor.authorLee, Po-Tsungen_US
dc.contributor.authorChen, Zhongen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-06-03T01:08:36Z-
dc.date.available2019-06-03T01:08:36Z-
dc.date.issued2019-04-01en_US
dc.identifier.issn2073-4352en_US
dc.identifier.urihttp://dx.doi.org/10.3390/cryst9040203en_US
dc.identifier.urihttp://hdl.handle.net/11536/151967-
dc.description.abstractTo realize high-efficiency, AlGaN-based, deep-ultraviolet light-emitting diodes (DUV-LEDs), enhancing their light-extraction efficiency and reducing thermal resistance is very crucial. We proposed a liquid packaging structure that could enhance optical power by 27.2% and 70.7% for flat type and lens type 281-nm DUV-LEDs, respectively. A significant improvement effect at different wavelengths, such as 268 nm and 310 nm, was also observed. Furthermore, using the liquid packaging structure, the thermal resistance was reduced by 30.3% compared to the conventional structure. Finally, the reliability of liquid packaging DUV-LEDs was tested. The light output maintenance of liquid packaging DUV-LEDs was compared to the conventional structure.en_US
dc.language.isoen_USen_US
dc.subjectdeep-ultraviolet light emitting diodeen_US
dc.subjectsilicone oilen_US
dc.subjectliquid packagingen_US
dc.titleA Novel Liquid Packaging Structure of Deep-Ultraviolet Light-Emitting Diodes to Enhance the Light-Extraction Efficiencyen_US
dc.typeArticleen_US
dc.identifier.doi10.3390/cryst9040203en_US
dc.identifier.journalCRYSTALSen_US
dc.citation.volume9en_US
dc.citation.issue4en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000467300100023en_US
dc.citation.woscount0en_US
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