標題: | A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's |
作者: | Lee, RGH Su, JS Chung, SS 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 1-一月-1996 |
摘要: | Previous studies showed that simultaneous determination of the interface states (N-it) and oxide-trapped charges (Q(ox)) in the vicinity of the drain side in MOS devices was rather difficult, A new technique which allows a consistent characterization of the spatial distributions of both hot-carrier-induced N-it and Q(ox) is presented, Submicron LDD n-MOS devices were tested and charge pumping measurements were performed, The spatial distributions of both N-it and Q(ox) have been justified by two-dimensional (2-D) device simulation of the I-V characteristics for devices before and after the stress. Comparison of the drain current characteristics between simulation and experiment shows very good agreement. Moreover, results show that fixed-oxide charge effect is less pronounced to the device degradation for devices. |
URI: | http://dx.doi.org/10.1109/16.477596 http://hdl.handle.net/11536/1521 |
ISSN: | 0018-9383 |
DOI: | 10.1109/16.477596 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 43 |
Issue: | 1 |
起始頁: | 81 |
結束頁: | 89 |
顯示於類別: | 期刊論文 |