完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Yi-Chun | en_US |
dc.contributor.author | Chang, Li | en_US |
dc.date.accessioned | 2019-08-02T02:15:24Z | - |
dc.date.available | 2019-08-02T02:15:24Z | - |
dc.date.issued | 2019-06-01 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://dx.doi.org/10.7567/1347-4065/ab07a0 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152146 | - |
dc.description.abstract | Nitridation of sapphire to form epitaxial AlN by microwave plasma containing nitrogen gas has been investigated to be an efficient process. Structural characterization with chemical analysis by X-ray diffraction and X-ray photoelectron spectroscopy shows that an epitaxial AlN film containing oxygen can form on sapphire by using pure nitrogen plasma. Furthermore, nitridation with N-2/H-2 plasma not only improves the crystallinity of the epitaxial AlN film without oxygen, but also significantly increases the nitridation rate to 9 nm min(-1), resulting in 270 nm thick AlN for 30 min plasma nitriding. (C) 2019 The Japan Society of Applied Physics | en_US |
dc.language.iso | en_US | en_US |
dc.title | Epitaxial AlN on c-plane sapphire by plasma nitriding | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.7567/1347-4065/ab07a0 | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 58 | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000474911400019 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |