Title: Polymorphism Control of Layered MoTe2 through Two-Dimensional Solid-Phase Crystallization
Authors: Huang, Jyun-Hong
Hsu, Hao-Hua
Wang, Ding
Lin, Wei-Ting
Cheng, Chun-Cheng
Lee, Yao-Jen
Hou, Tuo-Hung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 19-Jun-2019
Abstract: Two-dimensional (2D) molybdenum ditelluride (MoTe2) exhibits an intriguing polymorphic nature, showing stable semiconducting 2H and metallic 1T' phases at room temperature. Polymorphism in MoTe2 presents new opportunities in developing phase-change memory, high- performance transistors, and spintronic devices. However, it also poses challenges in synthesizing homogeneous MoTe2 with a precisely controlled phase. Recently, a new yet simple method using sputtering and 2D solid-phase crystallization (SPC) is proposed for synthesizing high-quality and large-area MoTe2. This study investigates the polymorphism control of MoTe2 synthesis using 2D SPC. The Te/Mo ratio and oxygen content in the as-sputtered films correlate strongly with the final phase and electrical properties of SPC MoTe2. Furthermore, the SPC thermal budget may be exploited for stabilizing a deterministic phase. The comprehensive experiments presented in this work demonstrate the versatile and precise controllability on the MoTe2 phase by using the simple 2D SPC technique.
URI: http://dx.doi.org/10.1038/s41598-019-45142-x
http://hdl.handle.net/11536/152152
ISSN: 2045-2322
DOI: 10.1038/s41598-019-45142-x
Journal: SCIENTIFIC REPORTS
Volume: 9
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End Page: 0
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