完整後設資料紀錄
DC 欄位語言
dc.contributor.authorAnandan, Deepaken_US
dc.contributor.authorNagarajan, Venkatesanen_US
dc.contributor.authorKakkerla, Ramesh Kumaren_US
dc.contributor.authorYu, Hung Weien_US
dc.contributor.authorKo, Hua Lunen_US
dc.contributor.authorSingh, Sankalp Kumaren_US
dc.contributor.authorLee, Ching Tingen_US
dc.contributor.authorChang, Edward Yien_US
dc.date.accessioned2019-08-02T02:15:28Z-
dc.date.available2019-08-02T02:15:28Z-
dc.date.issued2019-09-15en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2019.06.016en_US
dc.identifier.urihttp://hdl.handle.net/11536/152173-
dc.description.abstractIn this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications.en_US
dc.language.isoen_USen_US
dc.subjectNanomaterialsen_US
dc.subjectSemiconducting III-V materialsen_US
dc.subjectMOCVDen_US
dc.subjectInfrared devicesen_US
dc.subjectCrystal structureen_US
dc.subjectAntimonidesen_US
dc.titleCrystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratioen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.jcrysgro.2019.06.016en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume522en_US
dc.citation.spage30en_US
dc.citation.epage36en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.department國際半導體學院zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.contributor.departmentInternational College of Semiconductor Technologyen_US
dc.identifier.wosnumberWOS:000475758000006en_US
dc.citation.woscount0en_US
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