完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Anandan, Deepak | en_US |
dc.contributor.author | Nagarajan, Venkatesan | en_US |
dc.contributor.author | Kakkerla, Ramesh Kumar | en_US |
dc.contributor.author | Yu, Hung Wei | en_US |
dc.contributor.author | Ko, Hua Lun | en_US |
dc.contributor.author | Singh, Sankalp Kumar | en_US |
dc.contributor.author | Lee, Ching Ting | en_US |
dc.contributor.author | Chang, Edward Yi | en_US |
dc.date.accessioned | 2019-08-02T02:15:28Z | - |
dc.date.available | 2019-08-02T02:15:28Z | - |
dc.date.issued | 2019-09-15 | en_US |
dc.identifier.issn | 0022-0248 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.jcrysgro.2019.06.016 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152173 | - |
dc.description.abstract | In this work, the influence of V/III ratio on self-catalyzed InSb nanowire (NW) crystal structure is investigated using metal organic chemical vapor deposition. The effective balance of V/III ratio determines the change of InSb NW crystal structure from zincblende to wurtzite. Particularly, as group-V molar flow varies from 6.4 x 10(-5) to 8.0 x 10(-5) mol/min, wurtzite segment length of InSb NW increases from 16 +/- 9 nm to 89 +/- 9 nm, whereas zincblende crystal phase is observed for other molar flows. We interpret the observed phase transition to a lower surface energy of In-Sb alloy droplet than pure In-droplet, which makes triple phase line nucleation energetically favorable. This study gives insight on single growth parameter (V/III ratio) change to the InSb NW crystal control, such a technique is essential to selectively tune the crystal phase of single NW for various applications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Nanomaterials | en_US |
dc.subject | Semiconducting III-V materials | en_US |
dc.subject | MOCVD | en_US |
dc.subject | Infrared devices | en_US |
dc.subject | Crystal structure | en_US |
dc.subject | Antimonides | en_US |
dc.title | Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.jcrysgro.2019.06.016 | en_US |
dc.identifier.journal | JOURNAL OF CRYSTAL GROWTH | en_US |
dc.citation.volume | 522 | en_US |
dc.citation.spage | 30 | en_US |
dc.citation.epage | 36 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 國際半導體學院 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | International College of Semiconductor Technology | en_US |
dc.identifier.wosnumber | WOS:000475758000006 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 期刊論文 |