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dc.contributor.authorLu, Cheng-Hsienen_US
dc.contributor.authorJhu, Shu-Yanen_US
dc.contributor.authorChen, Chiao-Peien_US
dc.contributor.authorTsai, Bin-Lingen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2019-08-02T02:15:29Z-
dc.date.available2019-08-02T02:15:29Z-
dc.date.issued2019-07-01en_US
dc.identifier.issn0018-9383en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TED.2019.2915332en_US
dc.identifier.urihttp://hdl.handle.net/11536/152184-
dc.description.abstractA low-temperature wafer-level polyimide/metal asymmetric hybrid bonding structure using Cu/Sn metal and low-curing temperature polyimide is proposed in this paper. The Cu/Sn and polyimide can be bonded simultaneously at 250 degrees C. An ultrathin nickel (Ni) buffer layer was used to prevent intermetallic compound (IMC) formation during the deposition process of Sn. Moreover, the asymmetric bonding process could not only optimize the metal and polymer deposition processes but also achieve ultrathin bonding. Furthermore, to solve the issue of surface roughness, the window of polymerto- solder (P/S) thickness ratio from 1.51 to 2.66 was also demonstrated to show the tolerance of polymer hybrid bonding. The specific contact resistances of the bonded structures were generally maintained between 10-7 and 10(-8) Omega-cm(2), which indicate excellent electrical performance. As a result, the proposed wafer-level asymmetric hybrid bonding is a promising method for future 2.5-D and 3-D integration.en_US
dc.language.isoen_USen_US
dc.subjectApplication windowen_US
dc.subjectCu/Snen_US
dc.subjecthybrid bondingen_US
dc.subjectlow temperatureen_US
dc.subjectpolyimideen_US
dc.subjectwafer levelen_US
dc.titleAsymmetric Wafer-Level Polyimide and Cu/Sn Hybrid Bonding for 3-D Heterogeneous Integrationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2019.2915332en_US
dc.identifier.journalIEEE TRANSACTIONS ON ELECTRON DEVICESen_US
dc.citation.volume66en_US
dc.citation.issue7en_US
dc.citation.spage3073en_US
dc.citation.epage3079en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000472184900033en_US
dc.citation.woscount0en_US
Appears in Collections:Articles