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dc.contributor.authorGu, Siyongen_US
dc.contributor.authorHsieh, Chien-Teen_US
dc.contributor.authorGandomi, Yasser Ashrafen_US
dc.contributor.authorChang, Jeng-Kueien_US
dc.contributor.authorLi, Juen_US
dc.contributor.authorLi, Jianlinen_US
dc.contributor.authorZhang, Houanen_US
dc.contributor.authorGuo, Qingen_US
dc.contributor.authorLau, Kah Chunen_US
dc.contributor.authorPandey, Ravindraen_US
dc.date.accessioned2019-08-02T02:15:29Z-
dc.date.available2019-08-02T02:15:29Z-
dc.date.issued2019-05-14en_US
dc.identifier.issn2050-7526en_US
dc.identifier.urihttp://dx.doi.org/10.1039/c9tc00233ben_US
dc.identifier.urihttp://hdl.handle.net/11536/152191-
dc.description.abstractTunable photoluminescent nitrogen-doped graphene and graphitic carbon nitride (g-C3N4) quantum dots are synthesized via a facile solid-phase microwave-assisted (SPMA) technique utilizing the pyrolysis of citric acid and urea precursors. The atomic ratio, surface functionalization, and atomic structure of as-prepared quantum dots strongly depend on the ratio of citric acid to urea. The quantum dots have a homogeneous particle size and tend to form a circle and/or ellipse shape to minimize the edge free energy. The atomic ratio of surface nitrogen to carbon (N/C) in the quantum dots can reach as high as 1.74, among the highest values reported in the literature. The SPMA technique is capable of producing high-quality quantum dots with photoluminescence (PL) emission at various wavelengths on a pilot scale. The atomic structures of the N-doped graphene and g-C3N4 quantum dots are explored using molecular dynamics simulations. Increasing the urea concentration increases the tendency of in-plane N (i.e., quaternary N) substitution over that of other amino functionalizations, such as pyrrolic and pyridinic N. The PL emission can be precisely tuned via a one-step SPMA method by adjusting the precursor composition. A high quantum yield of 38.7% is achieved with N-doped graphene quantum dots, indicating the substantial influence of the N- and O-rich edge groups on the enhancement of PL efficiency. A bandgap structure is proposed to describe the interstate (*-) transition of quantum dots. This work introduces a novel approach for engineering the chemical composition and atomic structure of graphene and g-C3N4 quantum dots, facilitating their research and applications in optical, electronic, and biomedical devices.en_US
dc.language.isoen_USen_US
dc.titleMicrowave growth and tunable photoluminescence of nitrogen-doped graphene and carbon nitride quantum dotsen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c9tc00233ben_US
dc.identifier.journalJOURNAL OF MATERIALS CHEMISTRY Cen_US
dc.citation.volume7en_US
dc.citation.issue18en_US
dc.citation.spage5468en_US
dc.citation.epage5476en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000472443000029en_US
dc.citation.woscount0en_US
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