BCB-to-oxide bonding technology for 3D integration

doi:10.1016/j.microrel.2011.05.008

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DC 欄位	值	語言
dc.contributor.author	Lin, S. L.	en_US
dc.contributor.author	Huang, W. C.	en_US
dc.contributor.author	Ko, C. T.	en_US
dc.contributor.author	Chen, K. N.	en_US
dc.date.accessioned	2014-12-08T15:21:23Z	-
dc.date.available	2014-12-08T15:21:23Z	-
dc.date.issued	2012-02-01	en_US
dc.identifier.issn	0026-2714	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.microrel.2011.05.008	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15220	-
dc.description.abstract	Process optimization of BCB polymer to silicon oxide bonding was investigated. The suitable bonding temperature is about 300 degrees C, while bond failure of BCB-to-oxide bonding is observed starting from 400 degrees C. Bonding interface morphologies and bond strengths of BCB-to-oxide bonding were investigated as well. PECVD oxide to BCB bonding has better bonding quality than that of thermal oxide to BCB bonding. Si-O-Si bonds may be the reason of a strong BCB to oxide bonding. Water molecules link BCB and oxide surfaces during the initial contact, while Si-O-Si bonds are formed during bonding. This proposed mechanism of BCB-to-oxide bonding provides a guideline for polymer to oxide hybrid bonding technology in 3D integration. (C) 2011 Elsevier Ltd. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	BCB-to-oxide bonding technology for 3D integration	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.microrel.2011.05.008	en_US
dc.identifier.journal	MICROELECTRONICS RELIABILITY	en_US
dc.citation.volume	52	en_US
dc.citation.issue	2	en_US
dc.citation.spage	352	en_US
dc.citation.epage	355	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000300190600009	-
dc.citation.woscount	1	-
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