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dc.contributor.authorKim, Gowoonen_US
dc.contributor.authorCho, Hai Junen_US
dc.contributor.authorSheu, Yu-Miinen_US
dc.contributor.authorOhta, Hiromichien_US
dc.date.accessioned2019-08-02T02:15:33Z-
dc.date.available2019-08-02T02:15:33Z-
dc.date.issued2019-06-27en_US
dc.identifier.issn1932-7447en_US
dc.identifier.urihttp://dx.doi.org/10.1021/acs.jpcc.9b02448en_US
dc.identifier.urihttp://hdl.handle.net/11536/152229-
dc.description.abstractOxygen-deficient tungsten oxide (WOx) is known as an active material for various future applications such as smart displays, photocatalysts, Li-ion battery, and so on. WOx exhibits versatile properties depending on the valence state of W, which can vary from +6 to +4. Therefore, clarifying the relationship between x, the valence state of W ion, and the material properties of WOx is crucial for discovering more unique device applications. In case of crystalline WOx, since WOx has many different phases, the valence state of W cannot be modulated continuously from +6 to +4. On the other hand, there is no phase boundary in amorphous (a-) WOx, the valence state of W ion can be continuously modulated against x, and the effect of valence state of W on the material properties of WOx can be thoroughly examined. Here, we report the electrical, optical, and thermal properties of a-WOx films with several valence states of +6 (d(0)), +5 (d(1)), and +4 (d(2)) for x ranging from 2.511 to 2.982. Although the +6 dominant films were electrical insulators with optical transparency in the visible region, we found that both optical transmissivity and electrical resistivity decreased drastically with increase in the +5 concentrations, which also enhances the thermal conductivity because heat can be carried by additional conduction electrons. As the +4 state became dominant in the film, the resistivity slightly increased, whereas the low visible transmission was maintained. These results suggest that the redox of tungsten between +6 and +5 is attributed to all versatile properties of a-WOx, which would be of great use for developing unique devices in the future.en_US
dc.language.isoen_USen_US
dc.titleElectrical, Optical, and Thermal Transport Properties of Oxygen-Deficient Amorphous WOx (2.5 < x < 3) Filmsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/acs.jpcc.9b02448en_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY Cen_US
dc.citation.volume123en_US
dc.citation.issue25en_US
dc.citation.spage15419en_US
dc.citation.epage15424en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000473251300005en_US
dc.citation.woscount0en_US
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