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dc.contributor.authorKou, Jianquanen_US
dc.contributor.authorShen, Chih-Chiangen_US
dc.contributor.authorShao, Huaen_US
dc.contributor.authorChe, Jiamangen_US
dc.contributor.authorHou, Xuen_US
dc.contributor.authorChu, Chunshuangen_US
dc.contributor.authorTian, Kangkaien_US
dc.contributor.authorZhang, Yonghuien_US
dc.contributor.authorZhang, Zi-Huien_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.date.accessioned2019-08-02T02:18:27Z-
dc.date.available2019-08-02T02:18:27Z-
dc.date.issued2019-06-10en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.27.00A643en_US
dc.identifier.urihttp://hdl.handle.net/11536/152289-
dc.description.abstractIn this work, the size-dependent effect for InGaN/GaN-based blue micro-light emitting diodes (mu LEDs) is numerically investigated. Our results show that the external quantum efficiency (EQE) and the optical power density drop drastically as the device size decreases when sidewall defects are induced. The observations are owing to the higher surface-to-volume ratio for small mu LEDs, which makes the Shockley-Read-Hall (SRH) non-radiative recombination at the sidewall defects not negligible. The sidewall defects also severely affect the injection capability for electrons and holes, such that the electrons and holes are captured by sidewall defects for the SRH recombination. Thus, the poor carrier injection shall be deemed as a challenge for achieving high-brightness mu LEDs. Our studies also indicate that the sidewall defects form current leakage channels, and this is reflected by the current density-voltage characteristics. However, the improved current spreading effect can be obtained when the chip size decreases. The better current spreading effect takes account for the reduced forward voltage. (C) 2019 Optical Society of America under the terms of the OSA Open Access Publishing Agreementen_US
dc.language.isoen_USen_US
dc.titleImpact of the surface recombination on InGaN/GaN-based blue micro-light emitting diodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.27.00A643en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume27en_US
dc.citation.issue12en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department光電工程研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of EO Enginerringen_US
dc.identifier.wosnumberWOS:000470849000006en_US
dc.citation.woscount0en_US
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