標題: Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect
作者: Huang, Shih-En
Yu, Chien-Lin
Su, Pin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: CMOS;FinFET;InGaAs;negative-capacitance field-effect transistor (NCFET);quantum confinement (QC)
公開日期: 1-六月-2019
摘要: This paper investigates the fin-width (W-Fin) sensitivity of threshold voltage (V-T) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to W-Fin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the V-T sensitivity to W-Fin for NC-FinFETs. Our study may provide insights for future scaling of FinFETs.
URI: http://dx.doi.org/10.1109/TED.2019.2907994
http://hdl.handle.net/11536/152342
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2907994
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 66
Issue: 6
起始頁: 2538
結束頁: 2543
顯示於類別:期刊論文