標題: | Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect |
作者: | Huang, Shih-En Yu, Chien-Lin Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | CMOS;FinFET;InGaAs;negative-capacitance field-effect transistor (NCFET);quantum confinement (QC) |
公開日期: | 1-六月-2019 |
摘要: | This paper investigates the fin-width (W-Fin) sensitivity of threshold voltage (V-T) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to W-Fin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the V-T sensitivity to W-Fin for NC-FinFETs. Our study may provide insights for future scaling of FinFETs. |
URI: | http://dx.doi.org/10.1109/TED.2019.2907994 http://hdl.handle.net/11536/152342 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2019.2907994 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 66 |
Issue: | 6 |
起始頁: | 2538 |
結束頁: | 2543 |
顯示於類別: | 期刊論文 |