標題: Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter
作者: Chiu, Ming-Hui
Tang, Hao-Ling
Tseng, Chien-Chih
Han, Yimo
Aljarb, Areej
Huang, Jing-Kai
Wan, Yi
Fu, Jui-Han
Zhang, Xixiang
Chang, Wen-Hao
Muller, David A.
Takenobu, Taishi
Tung, Vincent
Li, Lain-Jong
電子物理學系
Department of Electrophysics
關鍵字: 2D materials;chemical vapor deposition;heterojunctions;molybdenum diselenide;selective growth;transition metal dichalcogenides;tungsten diselenide
公開日期: 3-五月-2019
摘要: 2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metaloxide-semiconductor inverter based on p-type WSe2 and n-type MoSe2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.
URI: http://dx.doi.org/10.1002/adma.201900861
http://hdl.handle.net/11536/152379
ISSN: 0935-9648
DOI: 10.1002/adma.201900861
期刊: ADVANCED MATERIALS
Volume: 31
Issue: 18
起始頁: 0
結束頁: 0
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