1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorLiao, Chia-Chunen_US
dc.contributor.authorLin, Min-Chenen_US
dc.contributor.authorLiu, Shao-Xuanen_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:21:25Z-
dc.date.available2014-12-08T15:21:25Z-
dc.date.issued2012-02-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2011.2174609en_US
dc.identifier.urihttp://hdl.handle.net/11536/15237-
dc.description.abstractThis letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.en_US
dc.language.isoen_USen_US
dc.subjectMetal-induced lateral crystallization (MILC)en_US
dc.subjectstrainen_US
dc.subjectthin-film transistors (TFTs)en_US
dc.titleImpacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2011.2174609en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume33en_US
dc.citation.issue2en_US
dc.citation.spage239en_US
dc.citation.epage241en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000299812300037-
dc.citation.woscount1-
Appears in Collections:Articles


Files in This Item:

  1. 000299812300037.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.

Related Contents
Loading...