Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics

doi:10.1109/LED.2011.2174609

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liao, Chia-Chun	en_US
dc.contributor.author	Lin, Min-Chen	en_US
dc.contributor.author	Liu, Shao-Xuan	en_US
dc.contributor.author	Chao, Tien-Sheng	en_US
dc.date.accessioned	2014-12-08T15:21:25Z	-
dc.date.available	2014-12-08T15:21:25Z	-
dc.date.issued	2012-02-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2011.2174609	en_US
dc.identifier.uri	http://hdl.handle.net/11536/15237	-
dc.description.abstract	This letter investigates the impacts of proximity layers on metal-induced lateral crystallization (MILC). The underlying insulating layers not only affect the MILC growth length but also influence the electrical characteristics. Based on the comparison among the underlying insulating layers, SiN is unsuitable to be an underlying insulating layer because of concerns regarding the crystallization condition. This letter proposes three reasonable mechanisms, including the gettering of Ni, intrinsic stress, and the involvement of hydrogen to enhance the understanding of the impacts of proximity layers.	en_US
dc.language.iso	en_US	en_US
dc.subject	Metal-induced lateral crystallization (MILC)	en_US
dc.subject	strain	en_US
dc.subject	thin-film transistors (TFTs)	en_US
dc.title	Impacts of the Underlying Insulating Layers on the MILC Growth Length and Electrical Characteristics	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2011.2174609	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	33	en_US
dc.citation.issue	2	en_US
dc.citation.spage	239	en_US
dc.citation.epage	241	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000299812300037	-
dc.citation.woscount	1	-
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