完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChang, Pang-Chiaen_US
dc.contributor.authorChang, Chia-Yuen_US
dc.contributor.authorJian, Wen-Binen_US
dc.contributor.authorYuan, Chiun-Jyeen_US
dc.contributor.authorChen, Yu-Changen_US
dc.contributor.authorChang, Chia-Chingen_US
dc.date.accessioned2019-08-02T02:18:35Z-
dc.date.available2019-08-02T02:18:35Z-
dc.date.issued2019-06-01en_US
dc.identifier.issn1998-0124en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s12274-019-2363-2en_US
dc.identifier.urihttp://hdl.handle.net/11536/152383-
dc.description.abstractDNA is a self-assembled, double stranded natural molecule that can chelate and align nickel ions between its base pairs. The fabrication of a DNA-guided nickel ion chain (Ni-DNA) device was successful, as indicated by the conducting currents exhibiting a Ni ion redox reaction-driven negative differential resistance effect, a property unique to mem-elements (1). The redox state of nickel ions in the Ni-DNA device is programmable by applying an external bias with different polarities and writing times (2). The multiple states of Ni-DNA-based memristive and memcapacitive systems were characterized (3). As such, the development of Ni-DNA nanowire device-based circuits in the near future is proposed.en_US
dc.language.isoen_USen_US
dc.subjectDNA-guided nickel ion chain (Ni-DNA)en_US
dc.subjectnegative differential resistance (NDR)en_US
dc.subjectmemristive systemen_US
dc.subjectmemcapacitive systemen_US
dc.subjectnanowireen_US
dc.titleThe fabrication and application of Ni-DNA nanowire-based nanoelectronic devicesen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s12274-019-2363-2en_US
dc.identifier.journalNANO RESEARCHen_US
dc.citation.volume12en_US
dc.citation.issue6en_US
dc.citation.spage1293en_US
dc.citation.epage1300en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department生物科技學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Biological Science and Technologyen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000469405300007en_US
dc.citation.woscount0en_US
顯示於類別:期刊論文