標題: Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory
作者: Su, P. C.
Jiang, C. M.
Wang, C. W.
Wang, Tahui
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RRAM;read-disturb failure;SET-state current level;model
公開日期: 1-Jan-2018
摘要: The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results.
URI: http://hdl.handle.net/11536/152441
ISBN: 978-1-5386-5479-8
ISSN: 1541-7026
期刊: 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
起始頁: 0
結束頁: 0
Appears in Collections:Conferences Paper