完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Su, P. C. | en_US |
dc.contributor.author | Jiang, C. M. | en_US |
dc.contributor.author | Wang, C. W. | en_US |
dc.contributor.author | Wang, Tahui | en_US |
dc.date.accessioned | 2019-08-02T02:24:17Z | - |
dc.date.available | 2019-08-02T02:24:17Z | - |
dc.date.issued | 2018-01-01 | en_US |
dc.identifier.isbn | 978-1-5386-5479-8 | en_US |
dc.identifier.issn | 1541-7026 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/152441 | - |
dc.description.abstract | The relationship between SET-state current level and read-disturb failure time in a tungsten oxide RRAM is characterized and modeled. Our result shows that read voltage induced reduction of oxygen vacancy density in tungsten oxide follows a power law dependence on cumulative read-disturb time. The power factor is independent of SET-state current level. Read disturb failure time is considerably improved by several orders of magnitude as SET-state current level increases a few times. An analytical model to correlate SET-state current level and read disturb failure time is proposed. Since SET-state current level is related to a cross-section of a conductive filament in an oxide, our model is developed based on a relationship between oxide area and critical oxide trap (oxygen vacancy) density from an oxide breakdown model. The validity of the proposed model is supported by experiment results. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | RRAM | en_US |
dc.subject | read-disturb failure | en_US |
dc.subject | SET-state current level | en_US |
dc.subject | model | en_US |
dc.title | Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching Memory | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | en_US |
dc.citation.spage | 0 | en_US |
dc.citation.epage | 0 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000468959600135 | en_US |
dc.citation.woscount | 0 | en_US |
顯示於類別: | 會議論文 |