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dc.contributor.authorMaksymovych, Peteren_US
dc.contributor.authorHuijben, Marken_US
dc.contributor.authorPan, Minghuen_US
dc.contributor.authorJesse, Stephenen_US
dc.contributor.authorBalke, Ninaen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorChang, Hye Jungen_US
dc.contributor.authorBorisevich, Albina Y.en_US
dc.contributor.authorBaddorf, Arthur P.en_US
dc.contributor.authorRijnders, Guusen_US
dc.contributor.authorBlank, Dave H. A.en_US
dc.contributor.authorRamesh, Ramamoorthyen_US
dc.contributor.authorKalinin, Sergei V.en_US
dc.date.accessioned2019-04-03T06:36:24Z-
dc.date.available2019-04-03T06:36:24Z-
dc.date.issued2012-01-31en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.85.014119en_US
dc.identifier.urihttp://hdl.handle.net/11536/15248-
dc.description.abstractUsing piezoresponse force microscopy in an ultrahigh vacuum, polarization switching has been detected and quantified in epitaxial BiFeO3 films from 200 to about 4 unit cells thick. Local remnant piezoresponse was utilized to probe both ferroelectric properties and effects of imperfect electrical contacts. It was found that the shape of electromechanical hysteresis loops is strongly influenced by an extrinsic dielectric gap, primarily through the suppressing effect of the depolarizing field on the spontaneous polarization in the ultrathin films. Furthermore, statistical analysis of the hysteresis loops has revealed lateral variation of the extrinsic dielectric gap with sub-10-nm resolution. Robust and reproducible ferroelectric properties of nanoscale BiFeO3 indicate its potential for nanoscale applications in information storage and spintronics.en_US
dc.language.isoen_USen_US
dc.titleUltrathin limit and dead-layer effects in local polarization switching of BiFeO3en_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.85.014119en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume85en_US
dc.citation.issue1en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000299868400001en_US
dc.citation.woscount34en_US
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