Ferroelectric, Small Bandgap and Wide Bandgap Materials for Ultra-Low Power Green Electronic Devices

Abstract

The power consumption in electronic devices is the major challenge as increasing the demand of IC chips. To lower the V-DD and AC power (P-AC), both high mobility material and steep turn-on device technology are useful. The ferroelectric high-K HfZrO MOSFET can realize not only a small sub-threshold slope (SS) < 60 mV/dec for low V-DD and P-AC, but also a smaller aspect ratio FinFET. The small bandgap (E-G) Ge pMOSFET can lower the P-AC by 4 times due to its 2x higher field-effective mobility at half effective field. The high-mobility wide E-G GaN MOSFET is a candidate to lower the direct tunneling leakage current and DC power (P-DC) by orders of magnitude in future deep X-nm device. The ferroelectric high-kappa HtZrO MOSFET can also perform DRAM function with lower P-DC than existing DRAM.