Full metadata record
DC FieldValueLanguage
dc.contributor.authorLee, Ko-Chunen_US
dc.contributor.authorYang, Shih-Hsienen_US
dc.contributor.authorSung, Yung-Shangen_US
dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorLin, Che-Yien_US
dc.contributor.authorYang, Feng-Shouen_US
dc.contributor.authorLi, Mengjiaoen_US
dc.contributor.authorWatanabe, Kenjien_US
dc.contributor.authorTaniguchi, Takashien_US
dc.contributor.authorHo, Ching-Hwaen_US
dc.contributor.authorLien, Chen-Hsinen_US
dc.contributor.authorLin, Yen-Fuen_US
dc.date.accessioned2019-09-02T07:46:09Z-
dc.date.available2019-09-02T07:46:09Z-
dc.date.issued2019-05-01en_US
dc.identifier.issn1616-301Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/adfm.201809011en_US
dc.identifier.urihttp://hdl.handle.net/11536/152574-
dc.description.abstractComplementary circuits based on 2D materials show great promise for next-generation electronics. An ambipolar all-2D ReSe2 field-effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence and noise measurements. Ambipolar transfer characteristics are achieved owing to the tunable Fermi level of the graphene contact and negligible and 30 meV Schottky barrier heights for the n- and p-channel regimes, respectively. An inverter is also fabricated to demonstrate ambipolar ReSe2 FET operation in a logic circuit. Furthermore, a p/n switchable unipolar FET is designed and shows potential for building complimentary circuits from a signal device. This work demonstrates the potential of all-2D ReSe2 FETs and makes available new approaches for designing next-generation devices.en_US
dc.language.isoen_USen_US
dc.subject2D materialsen_US
dc.subjectambipolar electronicsen_US
dc.subjectlogic circuiten_US
dc.subjectReSe2en_US
dc.subjectSchottky barriersen_US
dc.titleAnalog Circuit Applications Based on All-2D Ambipolar ReSe2 Field-Effect Transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/adfm.201809011en_US
dc.identifier.journalADVANCED FUNCTIONAL MATERIALSen_US
dc.citation.volume29en_US
dc.citation.issue22en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000476566300008en_US
dc.citation.woscount0en_US
Appears in Collections:Articles