標題: | Analog Circuit Applications Based on All-2D Ambipolar ReSe2 Field-Effect Transistors |
作者: | Lee, Ko-Chun Yang, Shih-Hsien Sung, Yung-Shang Chang, Yuan-Ming Lin, Che-Yi Yang, Feng-Shou Li, Mengjiao Watanabe, Kenji Taniguchi, Takashi Ho, Ching-Hwa Lien, Chen-Hsin Lin, Yen-Fu 電子物理學系 Department of Electrophysics |
關鍵字: | 2D materials;ambipolar electronics;logic circuit;ReSe2;Schottky barriers |
公開日期: | 1-五月-2019 |
摘要: | Complementary circuits based on 2D materials show great promise for next-generation electronics. An ambipolar all-2D ReSe2 field-effect transistor (FET) with a hexagonal boron nitride gate dielectric is fabricated and its electronic characteristics are comprehensively studied by temperature dependence and noise measurements. Ambipolar transfer characteristics are achieved owing to the tunable Fermi level of the graphene contact and negligible and 30 meV Schottky barrier heights for the n- and p-channel regimes, respectively. An inverter is also fabricated to demonstrate ambipolar ReSe2 FET operation in a logic circuit. Furthermore, a p/n switchable unipolar FET is designed and shows potential for building complimentary circuits from a signal device. This work demonstrates the potential of all-2D ReSe2 FETs and makes available new approaches for designing next-generation devices. |
URI: | http://dx.doi.org/10.1002/adfm.201809011 http://hdl.handle.net/11536/152574 |
ISSN: | 1616-301X |
DOI: | 10.1002/adfm.201809011 |
期刊: | ADVANCED FUNCTIONAL MATERIALS |
Volume: | 29 |
Issue: | 22 |
起始頁: | 0 |
結束頁: | 0 |
顯示於類別: | 期刊論文 |