標題: A Dual-Gate InGaZnO4-Based Thin-Film Transistor for High-Sensitivity UV Detection
作者: Chen, Po-Hsun
Tsao, Yu-Ching
Chien, Yu-Chieh
Chiang, Hsiao-Cheng
Chen, Hua-Mao
Lu, Ying-Hsin
Shih, Chih-Cheng
Tai, Mao-Chou
Chen, Guan-Fu
Tsai, Yu-Lin
Huang, Hui-Chun
Tsai, Tsung-Ming
Chang, Ting-Chang
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: InGaZnO4;thin film transistors;threshold voltage;UV sensors
公開日期: 1-Aug-2019
摘要: UV-sensing devices have received significant recent attention for applications in areas such as human health, fire detection, and optical communication. One key factor for product commercialization is determining the optimal materials that allow for integration of excellent UV-sensing properties with compatibility with industrial fabrication processes. However, current UV sensors often fail to achieve this due to either mismatched materials or a device that must be excessively large in order to produce enough photocurrent for UV detection. The UV-light-sensing properties of an amorphous InGaZnO4 (IGZO) thin-film transistor with a dual-gate structure and relatively small device size (width/length = 50 mu m/10 mu m) that achieves high sensitivity through a threshold-voltage-(V-th)-adjustment method is proposed. Comparing the drain currents under UV exposure to those under darkened conditions indicates that the ratio between the photoinduced and dark current reaches 10(6). Furthermore, the UV sensitivity of the dual-gate transistors can be adjusted by varying the bottom gate voltage, with each pixel of the sensor then being read out separately via scan line pulses. This allows the dual-gate a-IGZO transistor to be used for high-performance UV sensing while being effectively integrated in display applications.
URI: http://dx.doi.org/10.1002/admt.201900106
http://hdl.handle.net/11536/152584
ISSN: 2365-709X
DOI: 10.1002/admt.201900106
期刊: ADVANCED MATERIALS TECHNOLOGIES
Volume: 4
Issue: 8
起始頁: 0
結束頁: 0
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