標題: Suppression of "volcano" morphology and parasitic defect luminescence in AlGaN-based deep-UV light-emitting diode epitaxy
作者: Huang, Chia-Yen
Liu, Tsung-Yen
Huang, Shih-Ming
Chang, Kai-Hsiang
Tai, Tsu-Ying
Kuan, Chieh-Hsiung
Chang, Joseph Tung-Chieh
Lin, Ray-Ming
Kuo, Hao-Chung
光電工程學系
光電工程研究所
Department of Photonics
Institute of EO Enginerring
關鍵字: Defects;Line defects;Point defects;Surface structures;Metalorganic vapor phase epitaxy;Light-emitting diodes
公開日期: 1-Jun-2019
摘要: In this study we overcame several critical growth issues related to epitaxy in AlGaN deep-ultraviolet lightemitting diodes. Irregular-shaped pits with dislocation clusters were observed in micron-thick layers of AlGaN on AlN. The strain-induced morphology and defects were suppressed after the insertion of superlattice transition layers between the AlGaN and AlN layers. The defect luminescence in the active region was governed by radiative recombination through the oxygen shallow donors and deep acceptors related to III-vacancies. After optimization of the growth conditions and a decrease in growth interruption, the intensity of the parasitic blueband emission was suppressed by up to 95%. Energy dispersive spectroscopy suggests that the desorption of gallium from the surface is the major source of the III-vacancies.
URI: http://dx.doi.org/10.1016/j.rinp.2019.102285
http://hdl.handle.net/11536/152640
ISSN: 2211-3797
DOI: 10.1016/j.rinp.2019.102285
期刊: RESULTS IN PHYSICS
Volume: 13
起始頁: 0
結束頁: 0
Appears in Collections:Articles