Silicon introduced effect on resistive switching characteristics of WO(X) thin films

Abstract

The switching layer with Si interfusion is investigated to improve the electrical characteristics of WO(X) resistance random access memory (RRAM). The WO(X) has attracted extensive attention for RRAM because it can form by converting the surface of the W-plug with a current complementary metal oxide semiconductor (CMOS) compatible thermal oxidation process. In general, the resistance switching behavior of WO(X)-RRAM devices is unstable because the diverse oxidation state provided the stochastic conduction paths. In this research, the Si interfusion can effectively localize the filament conduction path in WO(X) resistance switching layer because the tungsten filament path is limited by SiO(X) in the WSiO(X) film during the forming process. (C) 2012 American Institute of Physics. [doi: 10.1063/1.3676194]